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Presented by Dr Fouad Karouta, Manager of Australian National Fabrication Facility at Australian National University.
Hosted by Platform Technologies Research Institute and RMIT’s MicroNano Research Facility.
General aspects of reactive ion etching (RIE) technique will be described such as anisotropy, loading effect, lag effect, RIE chemistries and micro-masking. This will be followed by a brief overview of etching dielectrics (SiOx, SiNx) and crystalline Si.
The second part of the paper is dedicated to etching III-V compound semiconductors where, based on RIE results of GaN material, a simple and practical thermodynamic approach is exposed explaining the criteria as to how to select the best chemistry for etching a specific material and to explain the GaN etching results.
Finally, a comprehensive study of etching InP-based materials using various chemistries will be discussed as well as their various photonic applications.
Dr Fouad Karouta obtained his degree in chemistry from the Lebanese University in Beirut in 1986.
He went on to receive his PhD from Montpellier University (France) in the area of epitaxy and LEDs of InGaAsSb structures.
He joined Eindhoven University of Technology in the Netherlands in 1987 at the Opto-electronic Devices Section of the Department of Electrical Engineering.
He was Assistant Professor and Associate Professor before joining ANU as the ANFF ACT Node Manager.
Dr Karouta has vast experience in managing research facilities and has been involved with research in III-V compound semiconductors (GaAs, InP, GaN) for optoelectronic and microelectronic applications for more than 30 years.
He has also published and co-authored a large number of papers on the subject.
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