Dr Jackson Smith

• Lee, Y.,Smith, J.,Cole, J. (2022). Influence of Device Geometry and Imperfections on the Interpretation of Transverse Magnetic Focusing Experiments In: Nanoscale Research Letters, 17, 1 - 12
• Klymenko, M.,Vaitkus, J.,Smith, J.,Cole, J. (2021). NanoNET: An extendable Python framework for semi-empirical tight-binding models In: Computer Physics Communications, 259, 1 - 13
• Cyster, M.,Smith, J.,Vogt, N.,Opletal, G.,Russo, S.,Cole, J. (2021). Simulating the fabrication of aluminium oxide tunnel junctions In: npj Quantum Information, 7, 1 - 12
• Li, Q.,Smith, J.,Yin, Y.,Wang, C.,Klymenko, M.,Cole, J.,Medhekar, N. (2021). Localized Wannier function based tight-binding models for two-dimensional allotropes of bismuth In: New Journal of Physics, 23, 1 - 27
• Cyster, M.,Smith, J.,Vaitkus, J.,Vogt, N.,Russo, S.,Cole, J. (2020). Effect of atomic structure on the electrical response of aluminum oxide tunnel junctions In: Physical Review Research, 2, 1 - 10
• Cortie, D.,Cyster, M.,Ablott, T.,Richardson, C.,Smith, J.,Iles, G.,Cole, J., et al, . (2020). Boson peak in ultrathin alumina layers investigated with neutron spectroscopy In: Physical Review Research, 2, 1 - 9
• Bartolo, T.,Smith, J.,Muralidharan, B.,Müller, C.,Stace, T.,Cole, J. (2020). Aharonov-Bohm interference as a probe of Majorana fermions In: Physical Review Research, 2, 1 - 11
• Smith, J.,Budi, A.,Per, M.,Vogt, N.,Drumm, D.,Hollenberg, L.,Cole, J.,Russo, S. (2017). Ab initio calculation of energy levels for phosphorus donors in silicon In: Scientific Reports, 7, 1 - 11
• Booth, J.,Drumm, D.,Casey, P.,Smith, J.,Russo, S. (2016). Hubbard physics in the PAW GW approximation In: Journal of Chemical Physics, 144, 1 - 12
• Booth, J.,Drumm, D.,Casey, P.,Smith, J.,Seeber, A.,Bhargava, S.,Russo, S. (2016). Correlating the energetics and atomic motions of the metal-insulator transition of m1 vanadium dioxide In: Scientific Reports, 6, 1 - 11

Jackson's research interests fall within the fields of quantum physics and condensed matter physics. His focus is quantum transport in nanoelectronic devices such as superconducting quantum bits, doped silicon nanostructures, and topological materials