Dr Jackson Smith

• Cyster, M.,Smith, J.,Vogt, N.,Opletal, G.,Russo, S.,Cole, J. (2021). Simulating the fabrication of aluminium oxide tunnel junctions In: npj Quantum Information, 7, 1 - 12
• Cyster, M.,Smith, J.,Vaitkus, J.,Vogt, N.,Russo, S.,Cole, J. (2020). Effect of atomic structure on the electrical response of aluminum oxide tunnel junctions In: Physical Review Research, 2, 1 - 10
• Cortie, D.,Cyster, M.,Ablott, T.,Richardson, C.,Smith, J.,Iles, G.,Cole, J., et al, . (2020). Boson peak in ultrathin alumina layers investigated with neutron spectroscopy In: Physical Review Research, 2, 1 - 9
• Bartolo, T.,Smith, J.,Muralidharan, B.,Müller, C.,Stace, T.,Cole, J. (2020). Aharonov-Bohm interference as a probe of Majorana fermions In: Physical Review Research, 2, 1 - 11
• Smith, J.,Budi, A.,Per, M.,Vogt, N.,Drumm, D.,Hollenberg, L.,Cole, J.,Russo, S. (2017). Ab initio calculation of energy levels for phosphorus donors in silicon In: Scientific Reports, 7, 1 - 11
• Booth, J.,Drumm, D.,Casey, P.,Smith, J.,Russo, S. (2016). Hubbard physics in the PAW GW approximation In: Journal of Chemical Physics, 144, 1 - 12
• Booth, J.,Drumm, D.,Casey, P.,Smith, J.,Seeber, A.,Bhargava, S.,Russo, S. (2016). Correlating the energetics and atomic motions of the metal-insulator transition of m1 vanadium dioxide In: Scientific Reports, 6, 1 - 11
• Smith, J.,Drumm, D.,Budi, A.,Vaitkus, J.,Cole, J.,Russo, S. (2015). Electronic transport in Si:P delta-doped wires In: Physical Review B, 92, 1 - 12
• Smith, J.,Cole, J.,Russo, S. (2014). Electronic properties of delta-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method In: Physical Review B (Condensed Matter and Materials Physics), 89, 1 - 11
• Drumm, D.,Smith, J.,Per, M.,Budi, A.,Hollenberg, L.,Russo, S. (2013). Ab initio electronic properties of monolayer phosphorus nanowires in silicon In: Physical Review Letters, 110, 126802-1 - 126802-5

Jackson's research interests fall within the fields of quantum physics and condensed matter physics. His focus is quantum transport in nanoelectronic devices such as superconducting quantum bits, doped silicon nanostructures, and topological materials